| 1. Acid
Characterization in Photoresist Films In order to model chemically amplified photoresists (CARs or CAMPs), one must be able to model the photochemical generation of acid in the resist film. This requires kinetics studies of the generation of acid from photoacid generators in thin polymer films during UV exposure. In order to perform such kinetics studies, one must be able to measure the extremely small amounts of acid produced in these polymer thin films. This project is focused on developing novel measurement techniques for acids in polymer thin films. The current methodology being pursued is based upon capacitance methods. |
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| 2. Advanced
Electron Beam Resists The goal of this work is to develop improved resist materials for both low voltage (<5 keV) and high keV (>40 keV) electron beam patterning. One current project is focused on developing a non-chemically amplified e-beam resist based on blends of polysulfone and novolac polymers. |
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| 3. Microfluidics The goal of this work is to apply our expertise in the area of microfabrication and patterning to the fabrication of microfluidic devices. Our current focus is on development of a novel microfluidic manufacturing method that uses thermally sacrificial polymers. This fabrication method is compatible with standard IC processing methods, and thus microfluidic devices with high levels of electrical functionality can be produced. One current topic is the development of directly photopatternable thermally sacrificial materials based upon polynorbornenes, polycarbonates, and other polymers. |
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| 4. Photochemical
Deposition of Metals and Metal Oxides This work explores the use of a novel class of radiation sensitive organometallic compounds that can be coated from solution onto substrates and subsequently exposed patternwise to directly produce patterned metal and metal oxide structures. Currently we are exploring the use of these materials for the fabrication of integral passive devices in printed wiring boards (PWBs) and for use as novel electron beam resists. |
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| 5. Polymer
Dissolution Phenomena The phenomena associated with the dissolution of resist polymers into aqueous alkaline solutions is still not a well understood phenomena. This work is directed at providing a better understanding of the dissolution behavior of polymers into aqueous and organic solvents and includes a combination of experimental and simulation activities. |
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| 6. Simulation
and Modeling of High Resolution Patterning One of the general interests of our research group is to develop models and simulation tools that can be used to simulate the lithographic process. Currently work is underway to develop exposure and development models for a variety of conventional and novel lithographic resist systems. |
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| 7. Surface
Monolayer Initiated Polymerization Conventional lithography is a subtractive process in which a photoresist is applied uniformly to a substrate and subsequently exposed and developed (etched) to produce the desired patterned protective film. As feature sizes continue to decrease, the use of such conventional resist schemes is becoming increasingly difficult. In this work, a novel and different approach is being explored in which a initiator monolayer is deposited and patterned. This patterned initiator monolayer is then used to "grow" polymer resist features off of the substrate surface in an additive fashion. |
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| 8. Thick
Film Photoresists Thick film photoresists (i.e. thicknesses ~>5 microns) are used in a wide variety of applications from disk drive head manufacturing to the fabrication of displays. Thick resist films behave differently than their thin film counterparts in many cases due to a variety of factors such as solvent gradients in the resist film. This work is directed at understanding these complex phenomena which influence the performance of thick film photoresists and using this knowledge to develop beter thick film photoresist models and processes. |
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| 9. Thin layer imaging As low wavelength lithography (157nm, 193nm) and other limited penetration depth exposure technologies (EUV, low voltage e-beam) are developed as future patterning technologies, there is a critical need for photoresist technologies that can function with such limited penetration depth exposure radiation. In top surface imaging (TSI), interaction of the exposure radiation and the resist within only a limited surface layer of the resist film can be used to form a pattern throughout the entire thickness of the resist film. In this work, we are exploring a number of novel TSI resist materials and processes. |
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